GRAPHENE-HEXAGONAL BORON NITRIDE WORK FUNCTION RESPONSE TO UNIFORM PLANAR DEFORMATIONS

Abstract:
Graphene and hexagonal boron nitride (hBN) are two-dimensional materials with unique electronic properties and potential applications in various fields, including electronics, optoelectronics, and nanomechanics. The work function, which represents the minimum energy required to remove an electron from the surface of a material, plays a crucial role in determining the device performance and functionality. Understanding the work function response of graphene and hBN to deformations is essential for designing and optimizing electronic devices based on these materials.

In this study, we investigate the work function response of graphene-hBN heterostructures to uniform planar deformations. We consider different types of deformations, including uniaxial strain and biaxial strain, applied to the heterostructure. Using first-principles calculations based on density functional theory, we calculate the work function of the graphene-hBN heterostructure under various strain conditions.

Our results reveal that both graphene and hBN exhibit significant changes in their work functions under uniform planar deformations. The work function of graphene is found to be highly sensitive to strain, with a non-linear relationship between strain and work function. The work function of hBN also shows strain-dependent behavior, albeit with a different response compared to graphene. The heterostructure’s work function response is influenced by the interlayer coupling and the intrinsic properties of graphene and hBN.

Furthermore, we investigate the effect of strain-induced modifications on the electronic band structure and charge transfer between graphene and hBN layers. Our findings provide insights into the modulation of work function and electronic properties of graphene-hBN heterostructures through strain engineering, which can be valuable for the design and optimization of future nanoelectronic devices.

In summary, this study sheds light on the work function response of graphene-hBN heterostructures to uniform planar deformations. The observed strain-induced changes in work function and electronic properties highlight the potential of strain engineering as a powerful tool for tailoring the performance of graphene-based devices. The results presented here contribute to a deeper understanding of the fundamental physics governing the unique properties of two-dimensional materials and pave the way for their practical applications in next-generation electronic devices.