TIGHT BINDING DESCRIPTIONS OF GRAPHENE AND ITS DERIVATIVES

TIGHT BINDING DESCRIPTIONS OF GRAPHENE AND ITS DERIVATIVES

Abstract:
Graphene, a two-dimensional honeycomb lattice of carbon atoms, has attracted significant attention due to its remarkable electronic, mechanical, and thermal properties. Understanding the electronic structure of graphene and its derivatives is crucial for exploring their potential applications in various fields, including nanoelectronics, optoelectronics, and energy storage devices. Tight binding (TB) models have proven to be valuable tools for describing the electronic properties of graphene and its derivatives.

In this abstract, we provide an overview of TB descriptions used to investigate the electronic structure of graphene and its derivatives. The TB approach is based on a simplified quantum mechanical framework that captures the essential physics of the system while remaining computationally efficient. By considering the electronic interactions between neighboring atoms, TB models can accurately predict the energy bands and electronic states of graphene-based materials.

We discuss the fundamental principles and assumptions underlying TB models and highlight their versatility in capturing the unique properties of graphene and its derivatives. We explore the influence of various factors, such as lattice geometry, strain, defects, and doping, on the electronic structure of these materials. TB models can effectively capture the bandgap opening in graphene derivatives, such as graphene nanoribbons and graphene quantum dots, providing insights into their potential applications in nanoelectronic devices.

Moreover, we discuss the extension of TB models to investigate the electronic properties of other graphene-derived materials, including graphene oxide, functionalized graphene, and graphene-based heterostructures. By incorporating additional parameters, such as on-site energies and hopping integrals, TB models can account for the effects of chemical functionalization and heterostructure interfaces on the electronic structure of graphene-based materials.

Finally, we highlight the limitations of TB models and the need for more sophisticated theoretical approaches to accurately describe the electronic properties of graphene and its derivatives. Advanced techniques, such as density functional theory and many-body perturbation theory, can complement and extend the insights gained from TB models.

In conclusion, tight binding descriptions have proven to be valuable tools for understanding the electronic structure of graphene and its derivatives. By providing insights into the fundamental physics governing these materials, TB models contribute to the development of graphene-based technologies and advance our understanding of their potential applications in various domains.

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